Scientists discover a hidden magnetic state in antiferromagnets using laser pulses at room temperature, paving the way for ultra-fast, energy-efficient hard drives and next-generation data storage devices.
Scientists have discovered a new way to control the magnetic properties of materials using short laser pulses at room temperature. This breakthrough could lead to ultra-fast hard drives and next-generation data storage technologies.
Researchers from the Ioffe Physical-Technical Institute of the Russian Academy of Sciences, along with their colleagues, successfully changed the magnetic state of a special material known as an antiferromagnet using laser irradiation. Previously, similar experiments were only possible at extremely low temperatures ranging from -196°C to -269°C, which made them impractical for real-world applications.
How Magnetic Storage Works
Modern magnetic storage devices rely on materials called ferromagnets, such as iron, cobalt, and nickel. In these materials, magnetic moments (tiny magnetic arrows at the atomic level) align in the same direction. By switching this direction, devices can record digital data as “0” and “1.”
However, flipping these magnetic moments using external magnetic fields takes time and limits data speed. Scientists believe antiferromagnets could offer a faster alternative. In these materials, neighboring magnetic moments point in opposite directions, making them more stable and potentially faster for data processing.
Until now, researchers struggled to find an efficient way to rapidly switch the magnetic state of antiferromagnets at room temperature.
The Role of the “Latent” Magnetic State
In the new study, scientists experimented with iron borate, a material made of iron, boron, and oxygen. When heated to around 140°C, the magnetic moments in iron borate rotate by 90 degrees in a rapid phase transition.
When researchers applied short laser pulses, they observed that the magnetic moments changed direction almost instantly. More importantly, they discovered a previously hidden intermediate phase, called a “latent” state. This state lasts only millionths of a microsecond but plays a critical role in enabling fast and complete magnetic switching.
According to Anna Kuzikova from the A.F. Ioffe Institute, this is the first time scientists have rapidly switched the magnetic state of an antiferromagnet using a laser at temperatures slightly above room temperature.
Toward Ultra-Fast Hard Drives and MRAM
This discovery opens new possibilities for ultra-fast magnetic memory devices, including advanced hard drives and MRAM (magnetoresistive random-access memory). Laser-based switching is significantly faster and more energy-efficient than traditional methods using magnetic fields or electric currents.
Andrei Mironovich from NUST MISIS explained that this technique could be used in spintronic devices, where information is encoded in the magnetic state of electrons and controlled by optical pulses.
Experts also suggest the technology could benefit neuromorphic computing and logic systems. Alexander Chernov of the Russian Quantum Center noted that adjusting the laser power allows researchers to control the coexistence of different magnetic phases—an important requirement for brain-inspired computing systems.
Published in Physical Review Letters
The research, supported by the Russian Science Foundation, was published in the prestigious journal Physical Review Letters. Scientists from the Scientific and Practical Center of the National Academy of Sciences of Belarus and N.V. Chernyshevsky Saratov State University also contributed to the study.
Why This Matters
This breakthrough demonstrates a new physical effect that enables ultra-fast magnetization switching using light. The technology promises:
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Faster data recording speeds
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Lower energy consumption
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Reduced heat generation
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More stable magnetic memory systems
If successfully developed for commercial use, this innovation could significantly improve the performance of future hard drives, memory chips, and advanced computing systems.
